RTS-1000P High-Temp Four-Point Probe Resistivity System
RMS-1000P uses four-point probe method for thin film and wafer resistivity measurement, featuring dual-electrostatic measurement, 0.1mฮฉ~100Mฮฉ range, and specialized fixture for semiconductor materials.
- In-line four-probe method; protects thin-film samples
- Measures sheet resistance and resistivity (0.1 mฮฉโ100 Mฮฉ)
- Dual electrical-measurement combination for high stability
- Up to 1100ยฐC anti-oxidation furnace; one-touch lift
- Multi-atmosphere testing: inert/oxidizing/reducing, vacuum, flowing gas
- Classic four-point probe design for thin film/wafer measurement
Four-Point Probe Resistivity System Description
RMS-1000P High-Temp Four-Point Probe Resistivity Measurement System is designed for semiconductor thin films and wafer characterization. As an experiencedย semiconductor test equipment factory, we provide precise sheet resistance and resistivity measurement using dual electrostatic method. The system handles silicon, germanium, GaAs, and ITO films with specialized spring-loaded probe fixture, supporting RT-1000ยฐC testing in vacuum or controlled atmospheres forย R&D laboratories and wafer manufacturers.
Four-Point Probe Resistivity Technical Sheet
| Parameter | Value |
| Measurement Principle | In-line four-probe method; dual electrical-measurement combination |
| Main Measurement | Resistivity & sheet resistance |
| Range | 0.1 mฮฉโ100 Mฮฉ |
| Max Furnace Temperature | Up to 1100ยฐC |
| Atmosphere | Inert/oxidizing/reducing; vacuum; flowing atmosphere |
| Notable Features | One-touch lift; thin-film-friendly probe; professional thin-film software |
| Temperature Range | RT-600ยฐC / 1000ยฐC |
| Temperature Control Accuracy | ยฑ0.5ยฐC |
| Temperature Control Method | PID precision control |
| Heating Rate | 0-10ยฐC/min (typical 3ยฐC/min) |
| Resistance Range | 0.1mฮฉ ~ 100Mฮฉ |
| Resistivity Range | 1mฮฉ.cm ~ 10Mฮฉ.cm |
| Sheet Resistance Range | 0.1mฮฉ ~ 100Mฮฉ |
| Sample Specification | Thin film 15-30mm, d<4mm |
| Measurement Method | Four-point probe dual electrostatic |
| Electrode Material | Tungsten carbide / Platinum probes |
| Needle Insulation Resistance | โฅ1000Mฮฉ |
| Insulation Material | 99% alumina ceramic |
| Display | 10.1″ color touchscreen |
| Data Interface | USB |
| Communication Interface | LAN port |
| Data Storage | TXT format |
| Dimensions (LรHรW) | 630ร640ร450mm |
| Weight | 42.5kg |
| Power Supply | 220Vยฑ10%, 50Hz, 2.6kW |
| Standards | ASTM F84, GB/T1551-2009, GB/T1551-1995 |
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Four-Point Probe Resistivity Applications
RMS-1000P is specialized for semiconductor thin film characterization including silicon wafers, germanium substrates, GaAs, InSb, GaAsAl, GaAsP, solid solution semiconductors, and ITO conductive glass. Critical forย solar cell manufacturing, LED production, integrated circuit development, and transparent conductive film research.
Four-Point Probe Measurement Video
More Details
Four-Probe Advantage
Classic in-line probe design helps avoid damage to thin-film samples.
Atmosphere Options
Supports inert/oxidizing/reducing atmospheres, vacuum, and flowing gas for temperature-dependent measurements.
