MatMeas RMS-1000P high temperature four-probe measurement system is mainly used to evaluate the electrical conductivity of semiconductor films and sheets, the system adopts the inline four-probe measurement principle and the national standard of single crystal silicon physical test method and reference to the American A.S.T.M. standard design and development, can realize high temperature, vacuum and inert atmosphere conditions to measure silicon, germanium single crystal (bar, wafer) resistivity and silicon The system is designed and developed with reference to the American A.S.T.M. standard and can measure the resistivity of silicon and germanium single crystals (rods and wafers) and the square resistance of silicon epitaxial layers, diffusion layers and ion implantation layers, as well as the square resistance and resistivity of conductive glass (ITO) and other conductive films under high temperature, vacuum and inert atmosphere. The system is widely used in universities, research institutes and business units to study the electrical properties of semiconductor thin film and sheet materials.
Температура измерения: РТ-600°С/1000°С
Температурный режим: 0-10°С/мин (typical value: 3С/мин)
Точность контроля температуры: ±0,5°С
Диапазон измерения сопротивления: 0.1~ 100 м
Electropositive measurement range: 1mΩ.cm~100MΩ.cm
Square resistance range: 0.1~ 100 м
Среда измерения: воздух, текущая атмосфера, вакуумная атмосфера
Measurement combination: four-probe double electric measurement combination measurement
Размер образца: φ15~30mm, г<4mm sheet or film
Материал электрода: tungsten carbide needle / platinum probe
Формат хранения данных: текстовый формат ТХТ
Обмен данными: USB
Источник питания: 220В±10%, 50Гц
Рабочая Температура: 5C до +40с.
Температура хранения: -40С до +65С
Рабочая влажность: вплоть до 95% относительная влажность при +40°C (без конденсации)
Размер оборудования: 630х640х450мм (ДхВхШ)
Масса:38кг
Гарантия: 1 год
