MatMeas RMS-1000P high temperature four-probe measurement system is mainly used to evaluate the electrical conductivity of semiconductor films and sheets, the system adopts the inline four-probe measurement principle and the national standard of single crystal silicon physical test method and reference to the American A.S.T.M. standard design and development, can realize high temperature, vacuum and inert atmosphere conditions to measure silicon, germanium single crystal (bar, wafer) resistivity and silicon The system is designed and developed with reference to the American A.S.T.M. standard and can measure the resistivity of silicon and germanium single crystals (rods and wafers) and the square resistance of silicon epitaxial layers, diffusion layers and ion implantation layers, as well as the square resistance and resistivity of conductive glass (ITO) and other conductive films under high temperature, vacuum and inert atmosphere. The system is widely used in universities, research institutes and business units to study the electrical properties of semiconductor thin film and sheet materials.
Température de mesure: RT-600 ° C / 1000 ° C
Rampe de température: 0-10°C/minute (typical value: 3C/min)
Précision du contrôle de la température: ±0.5°C
Plage de mesure de résistance: 0.1~ 100m
Electropositive measurement range: 1mΩ.cm~100MΩ.cm
Square resistance range: 0.1~ 100m
Environnement de mesure: air, atmosphère fluide, atmosphère sous vide
Measurement combination: four-probe double electric measurement combination measurement
Taille de l'échantillon: φ15~30mm, d<4mm sheet or film
Matériau d'électrode: tungsten carbide needle / platinum probe
Format de stockage des données: Format de texte TXT
Transfert de données: USB
Source de courant: 220V±10 %, 50hertz
Température de fonctionnement: 5C à +40C.
Température de stockage: -40C à +65C
Humidité d'exploitation: jusqu'à 95% humidité relative à +40°C (sans condensation)
Taille de l'équipement: 630x640x450mm (LxHxP)
Lester:38kg
garantie: 1 année
