MatMeas RMS-1000P high temperature four-probe measurement system is mainly used to evaluate the electrical conductivity of semiconductor films and sheets, the system adopts the inline four-probe measurement principle and the national standard of single crystal silicon physical test method and reference to the American A.S.T.M. standard design and development, can realize high temperature, vacuum and inert atmosphere conditions to measure silicon, germanium single crystal (bar, wafer) resistivity and silicon The system is designed and developed with reference to the American A.S.T.M. standard and can measure the resistivity of silicon and germanium single crystals (rods and wafers) and the square resistance of silicon epitaxial layers, diffusion layers and ion implantation layers, as well as the square resistance and resistivity of conductive glass (ITO) and other conductive films under high temperature, vacuum and inert atmosphere. The system is widely used in universities, research institutes and business units to study the electrical properties of semiconductor thin film and sheet materials.
Temperatura de medición: RT-600°C/1000°C
rampa de temperatura: 0-10°C/min (typical value: 3C/min)
Precisión del control de temperatura: ±0,5 °C
Rango de medición de resistencia: 0.1~ 100m
Electropositive measurement range: 1mΩ.cm~100MΩ.cm
Square resistance range: 0.1~ 100m
Entorno de medición: aire, atmósfera que fluye, atmósfera de vacío
Measurement combination: four-probe double electric measurement combination measurement
Tamaño de la muestra: φ15~30mm, d<4mm sheet or film
Material del electrodo: tungsten carbide needle / platinum probe
formato de almacenamiento de datos: formato de texto txt
Transferencia de datos: USB
Fuente de alimentación: 220V±10%, 50Hz
Temperatura de funcionamiento: 5C a +40c.
Temperatura de almacenamiento: -40C a +65C
Humedad de funcionamiento: hasta 95% humedad relativa a +40°C (sin condensación)
Tamaño del equipo: 630x640x450mm (LxHxW)
Peso:38kg
Garantía: 1 año
