MatMeas RMS-1000P high temperature four-probe measurement system is mainly used to evaluate the electrical conductivity of semiconductor films and sheets, the system adopts the inline four-probe measurement principle and the national standard of single crystal silicon physical test method and reference to the American A.S.T.M. standard design and development, can realize high temperature, vacuum and inert atmosphere conditions to measure silicon, germanium single crystal (bar, wafer) resistivity and silicon The system is designed and developed with reference to the American A.S.T.M. standard and can measure the resistivity of silicon and germanium single crystals (rods and wafers) and the square resistance of silicon epitaxial layers, diffusion layers and ion implantation layers, as well as the square resistance and resistivity of conductive glass (ITO) and other conductive films under high temperature, vacuum and inert atmosphere. The system is widely used in universities, research institutes and business units to study the electrical properties of semiconductor thin film and sheet materials.
Messtemperatur: RT-600°C/1000°C
Temperaturrampe: 0-10°C/Min (typischer Wert: 3C/Min)
Genauigkeit der Temperaturregelung: ±0,5 °C
Widerstandsmessbereich: 0.1mΩ ~ 100 MΩ
Electropositive measurement range: 1mΩ.cm~100MΩ.cm
Square resistance range: 0.1mΩ ~ 100 MΩ
Messumgebung: Luft, fließende Atmosphäre, Vakuumatmosphäre
Measurement combination: four-probe double electric measurement combination measurement
Stichprobengröße: φ15~30mm, D<4mm sheet or film
Elektrodenmaterial: tungsten carbide needle / platinum probe
Format der Datenspeicherung: TXT-Textformat
Datentransfer: USB
Stromversorgung: 220V±10%, 50Hertz
Betriebstemperatur: 5C bis +40C.
Lagertemperatur: -40C bis +65C
Betriebsfeuchtigkeit: bis zu 95% relative Luftfeuchtigkeit bei +40°C (nicht kondensierend)
Gerätegröße: 630x640x450mm (LxHxB)
Gewicht:38kg
Garantie: 1 Jahr
